View TDA1572T_214823.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

INTEGRATED CIRCUITS
DATA SHEET
TDA1572T AM receiver
Product specification File under Integrated Circuits, IC01 May 1992
Philips Semiconductors
Product specification
AM receiver
GENERAL DESCRIPTION The TDA1572T integrated AM receiver circuit performs all the active functions and part of the filtering required of an AM radio receiver. It is intended for use in mains-fed home receivers and car radios. The circuit can be used for oscillator frequencies up to 50 MHz and can handle RF signals up to 500 mV. RF radiation and sensitivity to interference are minimized by an almost symmetrical design. The controlled-voltage oscillator provides signals with extremely low distortion and high spectral purity over the whole frequency range, even when tuning with variable capacitance diodes. If required, band switching diodes can easily be applied. Selectivity is obtained using a block filter before the IF amplifier. Features
TDA1572T
* Inputs protected against damage by static discharge * Gain-controlled RF stage * Double balanced mixer * Separately buffered, voltage-controlled and temperature-compensated oscillator, designed for simple coils * Gain-controlled IF stage with wide AGC range * Full-wave, balanced envelope detector * Internal generation of AGC voltage with possibility of second-order filtering * Buffered field strength indicator driver with short-circuit protection * AF preamplifier with possibilities for simple AF filtering * Electronic standby switch * IF output for stereo demodulator and search tuning.
QUICK REFERENCE DATA SYMBOL VP IP ViFR(rms) ViRF(rms) VoIF(rms) PARAMETER Supply voltage range Supply current range RF input voltage (RMS value) for (S + N)/N = 6 dB for THD = 3% IF output voltage (RMS value) AF output voltage (RMS value) VoAF(rms) AGC range Change of Vi for 1 dB Vi change of VoAF Indicator driver (pin 13) Output voltage Vo PACKAGE OUTLINE 20-lead mini-pack; plastic (SO20; SOT163A); SOT163-1; 1996 August 13. Vi = 500 mV(rms); RL = 2.7 k 2.5 2.8 3.1 V - 86 - dB m = 30% m = 80% Vi = 2 mV(rms) Vi = 2 mV(rms); fi = 1 MHz; m = 30%; fm = 400 Hz 240 310 390 mV - - 180 1.5 500 230 - - 290 V mV mV VP = 8.5 V CONDITIONS MIN. 7.5 15 TYP. 8.5 25 MAX. 14.0 28 UNIT V mA
May 1992
2
May 1992
Philips Semiconductors
AM receiver
3 Product specification
(1) Coil data: TOKO sample no. 7XNS-A7523DY; L1 : N1/N2 = 12/32; Qo = 65; QB = 57. Filter data: ZF = 700 at R3-4 = 3 k; ZI = 4.8 k.
TDA1572T
Fig.1 Block diagram and test circuits (connections shown in broken lines are not part of the test circuits).
Philips Semiconductors
Product specification
AM receiver
PINNING 1 2 3 4 5 6 7 8 9 MXO STB IFI1 IFI2 DET AFO1 AGC1 ACG2 AFO2 mixer output standby switch IF input 1 IF input 2 detector AF output 1 AGC stage 1 AGC stage 2 AF output 2 not connected not connected IF output indicator output buffered oscillator output oscillator 1 oscillator 2 supply voltage RF input 1 RF input 2 ground
TDA1572T
10 n.c. 11 n.c. 12 IFO 13 IND 14 OSO 15 OSC1 16 OSC2 17 VP 18 RFI1 19 RFI2 20 GND
Fig.2 Pinning diagram.
May 1992
4
Philips Semiconductors
Product specification
AM receiver
FUNCTIONAL DESCRIPTION Gain-controlled RF stage and mixer
TDA1572T
The differential amplifier in the RF stage employs an AGC negative feedback network to provide a wide dynamic range. Very good cross-modulation behaviour is achieved by AGC delays at the various signal stages. Large signals are handled with low distortion and the (S + N)/N ratio of small signals is improved. Low noise working is achieved in the differential amplifier by using transistors with low base resistance. A double balanced mixer provides the IF output signal to pin 1. Oscillator The differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. The oscillator is voltage-controlled and has little distortion or spurious radiation. It is specially suitable for electronic tuning using variable capacitance diodes. Band switching diodes can easily be applied using the stabilized voltage V15-20. An extra buffered oscillator output (pin 14) is available for driving a synthesizer. If this is not needed, resistor RL(14) can be omitted. Gain-controlled IF amplifier This amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter. Both stages are gain-controlled by the AGC negative feedback network. The IF output is available at pin 12. Detector The full-wave, balanced envelope detector has very low distortion over a wide dynamic range. Residual IF carrier is blocked from the signal path by an internal low-pass filter. AF preamplifier This stage preamplifies the audio frequency output signal. The amplifier output has an emitter follower with a series resistor which, together with an external capacitor, yields the required low-pass for AF filtering. AGC amplifier The AGC amplifier provides a control voltage which is proportional to the carrier amplitude. Second-order filtering of the AGC voltage achieves signals with very little distortion, even at low audio frequencies. This method of filtering also gives fast AGC settling time which is advantageous for electronic search tuning. The AGC settling time can be further reduced by using capacitors of smaller value in the external filter (C16 and C17). The AGC voltage is fed to the RF and IF stages via suitable AGC delays. The capacitor at pin 7 can be omitted for low-cost applications. Field strength indicator output A buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input signals over the whole dynamic range. If the field strength information is not needed, RL(13) can be omitted. Standby switch This switch is primarily intended for AM/FM band switching. During standby mode the oscillator, mixer and AF preamplifier are switched off. Short-circuit protection All pins have short-circuit protection to ground.
May 1992
5
Philips Semiconductors
Product specification
AM receiver
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VP = V17-20 |V18-19| -V18-19; -V19-20 V18-19; V19-20 I18; I20 Ptot Tstg Tamb Tj Ves Ves Ves Note Input current (pins 18 and 20) Total power dissipation Storage temperature range Operating ambient temperature range Junction temperature Electrostatic handling(1) -2000 -1500 -1000 all pins except pins 3, 6, 9, 14 pins 3, 6, 14 pin 9 Input voltage PARAMETER Supply voltage (pin 17) - - - - - - -55 -40 - MIN.
TDA1572T
MAX. 16 12 0.6 VP 200 500 +150 +85 +125 +2000 +2000 +2000 V V V V
UNIT
mA mW C C C V V V
1. Equivalent to discharging a 100 pF capacitor through a 1.5 k series resistor; (5 pulses, both polarities). THERMAL RESISTANCE From junction to ambient (in free air) Rth j-a (max.) = 95 K/W
May 1992
6
Philips Semiconductors
Product specification
AM receiver
TDA1572T
CHARACTERISTICS VP = V17-20 = 8.5 V; Tamb = 25 C; fi = 1 MHz; fm = 400 Hz; m = 30%; fIF = 460 kHz; measured in test circuit of Fig.1; all voltages referenced to ground; unless otherwise specified. SYMBOL Supply VP IP VI Zi Ci Zi Ci Zo Co I1/Vi V1-17(p-p) IO Supply voltage (pin 17) Supply current (pin 17) RF stage and mixer (pins 18 and 19) DC input voltage RF input impedance at VI < 300 V (rms) RF input capacitance RF input impedance at VI > 10 mV (rms) RF input capacitance IF output impedance (pin 1) IF output capacitance Conversion transconductance before start of AGC Maximum IF output voltage, inductive coupling to pin 1 (peak-to-peak value) DC value of output current; at VI = 0 V (pin 1) AGC range of input stage RF signal handling capability Input voltage (RMS value) Vi(rms) for THD = 3% at m = 80% - 500 - mV - - 1.2 30 - - mA dB - 5 - V - 6.5 - mA/V - - - - - 200 - VP/2 5.5 25 8 22 - 6 - - - - - - - V k pF k pF k pF 7.5 15 8.5 25 14.0 28 V mA PARAMETER MIN. TYP. MAX. UNIT
May 1992
7
Philips Semiconductors
Product specification
AM receiver
TDA1572T
SYMBOL Oscillator fosc V(rms) R(ext) R(ext) Frequency range
PARAMETER
MIN. -
TYP.
MAX.
UNIT
0.1 80 0.5 -
60 150 200 60
MHz mV k
Voltage amplitude (pins 15 to 16) (RMS value) External load impedance (pins 16 to 15) External load impedance for no oscillation (pins 16 to 15) Supply voltage ripple rejection at VP = 100 mV(rms); fp = 100 Hz SVRR V15-20 -IO (SVRR = 20 log [V17/V15]) Source voltage for switching diodes (6 x VBE) (pin 15) DC output current (for switching diodes) (pin 15) Change of output voltage at I15 = 20 mA (switch to maximum load) VI VO Vo(p-p) ZO -IO(peak) VI Zi Ci (pin 15) Buffered oscillator output (pin 14) DC output voltage Output signal amplitude (peak-to-peak value) Output impedance Output current (peak value) IF, AGC and AF stages DC input voltage (pins 3 and 4) IF input impedance (pins 3 to 4) IF input capacitance IF input voltage for THD = 3% at m = 80% (pins 3 and 4) ViIF(rms) Zo (RMS value) IF output impedance (pin 12) Unloaded IF output voltage at Vi = 10 mV (pin 12) VoIF(rms) Gv (RMS value) Voltage gain before start of AGC (pins 3 to 4; 6 to 20) AGC range of IF stages: change of V3-4 for 1 dB change of Vo(AF); Vv V3-4(ref) = 75 mV(rms) - 55 - dB - 68 - dB 180 230 290 mV - - 90 50 - - mV - 2.4 - 2.0 3.0 7 - 3.9 - V k pF - - - 320 170 - - - 3 mV mA - 0.8 - V - 0.3 - V 0 - 20 mA - 4.2 - V - 55 - dB - 130 -
May 1992
8
Philips Semiconductors
Product specification
AM receiver
TDA1572T
SYMBOL VoAF(rms) VoAF(rms) Zo Zo
PARAMETER AF output voltage (RMS value) at V3-4(IF) = 50 V(rms) at V3-4(IF) = 1 mV(rms) AF output impedance (pin 6) AF output impedance (pin 9) Indicator driver (pin 13) Output voltage at Vi = 0 mV(rms); - -
MIN.
TYP. 130 310 3.5 15.5 - -
MAX.
UNIT mV mV k k
2.8 12.4
4.2 18.6
Vo Vo RL -Io Zo Vo
RL = 2.7 k Output voltage at Vi = 500 mV(rms); RL = 2.7 k Load resistance Output current at Vi = 500 mV(rms) Output impedance at -Io = 0.5 mA Reverse output voltage at AM off Standby switch Switching threshold at; VP = 7.5 to 14 V Tamb = -40 to + 80 C
- 2.5 1.5 - - -
- 2.8 - - 220 6
140 3.1 - 2.0 - -
mV V k mA V
V2-20 V2-20 -I2 I2
ON-voltage OFF-voltage ON-current at V2-20 = 0 V OFF-current at V2-20 = 14 V
0 3.5 - -
- - 100 -
2.0 20.0 200 10
V V A A
May 1992
9
Philips Semiconductors
Product specification
AM receiver
TDA1572T
OPERATING CHARACTERISTICS VP = 8.5 V; fi = 1 MHz; m = 30%; fm = 400 Hz; Tamb = 25 C; measured in Fig.1; unless otherwise specified SYMBOL RF sensitivity RF input voltage (RMS value) ViRF(rms) ViRF(rms) ViRF(rms) ViRF(rms) for (S + N)/N = 6 dB for (S + N)/N = 26 dB for (S + N)/N = 46 dB at start of AGC RF large signal handling RF input voltage (RMS value) ViRF(rms) ViRF(rms) ViRF(rms) at THD = 3%; m = 80% at THD = 3%; m = 30% at THD = 10%; m = 30% AGC range Change of Vi for 1 dB change Vi Vi of VoAF; Vi(ref) = 500 mV(rms) Change of Vi for 6 dB change of VoAF; Vi(ref) = 500 mV(rms) Output signal (RMS value) VoIF(rms) VoAF(rms) VoAF(rms) THD THD THD (S + N)/N IF output voltage at Vi = 2 mV(rms) AF output voltage at Vi = 4 V(rms); m = 80% at Vi = 2 mV(rms) Total harmonic distortion at Vi = 2 mV(rms); m = 30% at Vi = 2 mV(rms); m = 80% at Vi = 500 mV(rms); m = 30% Signal-to-noise ratio at Vi = 100 mV(rms) Supply voltage ripple rejection at Vi = 2 mV(rms) VP = 100 mV(rms); fp = 100 Hz SVRR SVRR SVRR (SVRR = 20 log [VP/VoAF]) (a) additional AF signal at IF output (b) add modulation at IF output (mref = 30%) - - - 38 0(1) 40 - - - dB dB dB - - - - 0.5 1.0 1.0 58 - - - - % % % dB - 240 130 310 - 390 mV mV 180 230 290 mV - 91 - dB - 86 - dB - - - 500 700 900 - - - mV mV mV - - - - 1.5 15 150 30 - - - - V V V V PARAMETER MIN. TYP. MAX. UNIT
May 1992
10
Philips Semiconductors
Product specification
AM receiver
TDA1572T
SYMBOL Unwanted signals
PARAMETER
MIN.
TYP.
MAX.
UNIT
Suppression of IF whistles at Vi = 15 V; m = 0% related to AF signal of m = 30% 2IF 3IF IF IF I1(osc) I1(2osc) Note 1. AF signals at the IF output will be suppressed by a coupling capacitor to the demodulator and by full wave-detection in the demodulator. at fi 2 x fIF at fi 3 x fIF IF suppression at RF input; for symmetrical input for asymmetrical input Residual oscillator signal at mixer output; at fosc at 2 x fosc - - 1 1.1 - - A A - - 40 40 - - dB dB - - 37 44 - - dB dB
Fig.4 Fig.3 AF output as a function of RF input in the circuit of Fig.1; fi = 1 MHz; fm = 400 Hz; m = 30%.
Total harmonic distortion and (S + N)/N as functions of RF input in the circuit of Fig.1; m = 30% for (S + N)/N curve and m = 80% for THD curve.
May 1992
11
Philips Semiconductors
Product specification
AM receiver
TDA1572T
Fig.5
Total harmonic distortion as a function of modulation frequency at Vi = 5 mV; m = 80%; measured in the circuit of Fig.1 with C7-20(ext) = 0 F and 2.2 F.
___________
with IF filter; with AF filter; with IF and AF filters.
-- ------ Fig.6 Indicator driver voltage as a function of RF input in the circuit of Fig.1. Fig.7
Typical frequency response curves from Fig.1 showing the effect of filtering.
May 1992
12
Philips Semiconductors
Product specification
AM receiver
TDA1572T
Fig.8 IF output voltage as a function of RF input in the circuit of Fig.1; fi = 1 MHz.
Fig.9
Forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in Fig.10; centre frequency = 455 kHz.
May 1992
13
Philips Semiconductors
Product specification
AM receiver
APPLICATION INFORMATION
TDA1572T
Fig.10 IF filter variants applied to the circuit of Fig.1. For filter data, refer to Table 1.
May 1992
14
Philips Semiconductors
Product specification
AM receiver
TDA1572T
May 1992
15
Fig.11 Application diagram.
Philips Semiconductors
Product specification
AM receiver
TDA1572T
Fig.12 (S + N)/N as a function of input voltage; measured in the circuit of Fig.11 for AM stereo.
Fig.13 Total harmonic distortion (THD) as a function of input voltage; measured in the circuit of Fig.11 for AM stereo.
May 1992
16
Table 1 2 L1 430 13 : (33 + 66) 0.08 50 75 60 75 50 0.09 0.08 0.09 0.07 mm 15 : 31 29 : 29 13 : 31 26 : 32 3900 4700 3900 4700 pF L1 L2 L1 L1 3 4 5 UNIT
Data for IF filters shown in Fig.10 (Filter 1 to 4) and Fig.11 (Filter 5). Criteria for adjustment is IF = maximum (optimum selectivity curve at centre frequency f0 = 455 kHz). Filter 5 is used for AM stereo application with centre frequency f0 = 450 kHz.
May 1992
FILTER NO.
1
Coil data
L1
AM receiver
Value of C
3900
Philips Semiconductors
N1 : N2
12 : 32
Diameter of CU laminated wire
0.09
Qo
65 (typ.)
Schematic* of windings
(N1) L7PES-A0060BTG 7XNS-A7518DY 7XNS-A7521AIH
(N2) 7XNS-A7519DY
Toko order no.
7XNS-A7523DY
17 SFZ455A 4 3 4.2 24 24 4.2 3 4 6 3 4.5 38 SFZ455A SFT455B 3.8 40 0.67 3.8 31 49 58 52 (L1) 0.68 3.6 36 54 66 4.2 18 (L2) 4.8 55 0.68 4.0 42 64 74
Resonators SFH450F 6 2 10 dB k kHz dB
Murata type
SFZ455A
D (typical value)
4
RG, RL
3
Bandwidth (-3 dB) 4.2
S9kHz
24
Filter data 1.8 20 0.70 10 k kHz dB dB dB k
ZI
4.8
QB
57
ZF
0.70
Bandwidth (-3 dB) 3.6
S9kHz
35
S18kHz
52
TDA1572T
S27kHz
63
Product specification
* The beginning of an arrow indicates the beginning of a winding; N1 is always the inner winding, N2 the outer winding.
Philips Semiconductors
Product specification
AM receiver
PACKAGE OUTLINE SO20: plastic small outline package; 20 leads; body width 7.5 mm
TDA1572T
SOT163-1
D
E
A X
c y HE vMA
Z 20 11
Q A2 A1 pin 1 index Lp L 1 e bp 10 wM detail X (A 3) A
0
5 scale
10 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT mm inches A max. 2.65 0.10 A1 0.30 0.10 A2 2.45 2.25 A3 0.25 0.01 bp 0.49 0.36 c 0.32 0.23 D (1) 13.0 12.6 0.51 0.49 E (1) 7.6 7.4 0.30 0.29 e 1.27 0.050 HE 10.65 10.00 0.42 0.39 L 1.4 0.055 Lp 1.1 0.4 0.043 0.016 Q 1.1 1.0 0.043 0.039 v 0.25 0.01 w 0.25 0.01 y 0.1 0.004 Z
(1)
0.9 0.4 0.035 0.016
0.012 0.096 0.004 0.089
0.019 0.013 0.014 0.009
8 0o
o
Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. OUTLINE VERSION SOT163-1 REFERENCES IEC 075E04 JEDEC MS-013AC EIAJ EUROPEAN PROJECTION
ISSUE DATE 92-11-17 95-01-24
May 1992
18
Philips Semiconductors
Product specification
AM receiver
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all SO packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering
TDA1572T
Wave soldering techniques can be used for all SO packages if the following conditions are observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The longitudinal axis of the package footprint must be parallel to the solder flow. * The package footprint must incorporate solder thieves at the downstream end. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
May 1992
19
Philips Semiconductors
Product specification
AM receiver
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
TDA1572T
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
May 1992
20

▲Up To Search▲

Price & Availability of TDA1572T

	To Download TDA1572T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .